Abstract
We report a ZrO2-based resistive memory composed of a thin Cu doped ZrO2 layer sandwiched between Pt bottom and Cu top electrode.
I. INTRODUCTION
Resistive Random Access Memory (ReRAM) based on binary transition metal oxides has been widely investigated for the next generation nonvolatile memories due to their superior
characteristics including simple structure, excellent scalability and compatibility with standard CMOS process [1].
II. EXPERIMENTS
III. SWITCHING PROPERTIES
Figure 3 shows the device-to-device distributions of the
Vset and Vreset
Figure 4 shows the data retention capability of the
Cu/ZrO2:Cu/Pt device
IV. SWITCHING MECHANISM
In general, I-V curves are analyzed to study the switching
mechanism of the resistive switching in ReRAM devices [7].
Figure 6 (a) shows the ON state resistance (Ron) and Ireset as
a function of Icomp, ranging from 50 μA to 5 mA.
The cell size dependence of the resistance of the memory
device is shown in Figure 6 (b).
Recent studies have shown that the conducting filament in
the transition metal oxides may be formed by the percolation
of some kinds of defects, such as the migration of metal ions
or oxygen vacancies [9].
Figure 7 (a) shows the Ron as a function of the temperature
in the range from 180 to 320 K.
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Figure 7 (b) shows the temperature dependence of the
resistance in the OFF state.
Figure 7 (b) shows the temperature dependence of the
resistance in the OFF state
In order to understand the switching behavior, a schematic
of the filament formation and annihilation is described in
Figure 8.
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